JUYI

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JUYI 60V/50A High Quality Dual N Channel Enhancement Mode Power MOSFET

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GENERAL DESCRIPTION
The product utilizes the latest trench processing techniques to achieve the high cell
density and reduces the on-resistance with low gate charge. These features combine
to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.

FEATURES
● 60V/50A, RDS(ON)=14mΩ@VGS=10V(typical)
● Fast switching and reverse body recovery
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation

APPLICATIONS
● Power Switching application
● Synchronous rectification
● Motor drive for 12V-24V Systems

PIN DESCRIPTION
JUYI 60V/50A High Quality Dual N Channel Enhancement Mode Power MOSFET

Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
JUYI 60V/50A High Quality Dual N Channel Enhancement Mode Power MOSFET

Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
JUYI 60V/50A High Quality Dual N Channel Enhancement Mode Power MOSFET

Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
JUYI 60V/50A High Quality Dual N Channel Enhancement Mode Power MOSFET

Typical electrical and thermal characteristics
JUYI 60V/50A High Quality Dual N Channel Enhancement Mode Power MOSFET

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