JUYI
JUYI High Voltage Motor Driver Chip 3-Phase Gate Driver JY213H Built-in Deadtime Control
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JUYI High Voltage 3-Phase Gate Driver JY213H Built-in Deadtime Control
DESCRIPTION
The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced
output channels for 3-phase gate driver. Built-in deadtime protection and protection that prevent half-bridge
breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold
voltage.Shoot-through 600V high-voltage process and common-mode noise canceling technique provide stable
operation of high-side drivers under high-dv/dt noise circumstances.
FEATURES
- • Integrated 600V half-bridge high side driver
- • Driver up to 3-phase half-bridge gates
- • Built-in deadtime control
• Shoot-through protection
• Under voltage lockout for VCC and VBS
• 3.3V, 5V,15V input logic Compatible
• Built-in input filter
- • -40℃ to 125℃ operating range
• Common-Mode dv/dt Noise Canceling Circuit
APPLICATION
• 3-phase Motor Inverter Driver
• Air Condition
• Washing Machines
BLOCK DIAGRAM
TYPICAL APPLICATION CIRCUIT
PIN CONFIGURATION
PIN DESCRIPTION
FUNCTION DESCRIPTION
LOW SIDE POWER SUPPLY (VCC, GND（SGND, PGND）)
VCC is the low side supply and it provides power to both input logic and low side output power stage. In JY213H-S2,
input logic is referenced to SGND as well as the under-voltage detection circuit. Output power stage is referenced to
PGND. PGND ground is floating respect to SGND ground with a recommended range of operation of +/-5V, which
guarantees enough margin of gate to source voltage, VGS, to driver power devices such as power MOSFET.
The built-in under-voltage lockout circuit enables the device to operate at sufficient power on when a typical VCC
supply voltage higher than VCCUV+ =9.5 is present, shown as FIG1. The IC shuts down all the gate drivers outputs,
when the VCC supply voltage is below VCCUV- =8.8 V, shown as FIG1. This prevents the external power devices from
extremely low gate voltage levels during on-state and therefore from excessive power dissipation.
HIGH SIDE POWER SUPPLY (VBU-VSU, VBV-VSV, VBW-VSW)
VB to VS is the high side supply voltage. The totally high side circuitry can float with respect to SGND following the external
high side power device emitter/source voltage. Due to the internally low power consumption, the whole high side circuitry
can be supplied by bootstrap topology connected to VCC, and it can be powered with small bootstrap capacitors.
The device operating area as a function of the supply voltage is given in Figure2.
LOW SIDE AND HIGH CONTROL INPUT LOGIC (HU, V, W / LU, V, W)
The Schmitt trigger threshold of each input is designed enough low such to guarantee LSTTL and CMOS compatibility
down to 3.3 V controller outputs. Input Schmitt trigger and advanced noise filter provide beneficial noise rejection
to short input pulses. An internal pull-down resistor of about 200k (positive logic) pre-biases each input during VCC
supply start-up state. It is anyway recommended for proper work of the driver not to provide input pulse-width lower
than 400ns.
SHOOT-THROUGH PREVENTION
The IC is equipped with shoot-through prevention circuitry (also known as cross conduction prevention circuitry).
Figure 3 shows how this prevention circuitry prevents both the high- and low-side switches from conducting at the
same time.
During the inputs controlling high side driver and low side driver are both “high”, the both driver outputs are pulled
down “low” to shutdown two power devices in the same bridge.
DEAD TIME
The IC features integrated a fixed dead-time protection circuitry. The dead time feature inserts a time period (a minimum
dead time) in which both the high- and low-side power switches are held off; this is done to ensure that the power switch
being turned off has fully turned off before the second power switch is turned on. This minimum dead time is automatically
inserted whenever the external dead time is shorter than DT; external dead times larger than DT are not modified by the gate
driver. Figure 4 illustrates the dead time period and the relationship between the output gate signals
GATE DRIVER (HOU, V, W, LOU, V, W)
Low side and high side driver outputs are specifically designed for pulse operation and dedicated to drive the power devices
such as IGBT and MOSFET. Low side outputs (i.e. LOU, V, W) are state triggered by the respective inputs,while high side outputs
(i.e. HOU, V, W) are only changed at the edge of the respective inputs. In particular, after
releasing from an under voltage condition of the VBS supply, a new turn-on signal (edge) is necessary to activate the respective
high side output, while after releasing from a under voltage condition of the VCC supply, the low side outputs can directly switch
to the state of their respective inputs and don’t suffer from the trouble as high side driver.
ABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device or make the function abnormal. All the voltage parameters
are absolute voltages referenced to IC SGND unless otherwise stated in the table.
RECOMMENDED OPERATING CONDITIONS
Note1: For VBS=12V, normal Logic operation for VS of –8 V to 600 V. The parameter is only guaranteed by design.
PACKAGE INFORMATION
20-PIN, SOP, 300MIL
Notes:
1. Refer to JEDEC MS-013 AC.
2. Unit: mm.
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