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JUYI N Channel Enhancement Mode Power MOSFET 500V 8A with Fast switching

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JUYI N Channel Enhancement Mode Power MOSFET 500V 8A with Fast switching

GENERAL DESCRIPTION
The product utilizes the advanced planar processing techniques to achieve
the highcell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide
variety of other applications.

FEATURES
● 500V/8A, RDS(ON) =0.75Ω@VGS=10V(Typical)
● Fast switching and reverse body recovery
● Excellent package for good heat dissipation

APPLICATIONS
● Lighting
● High efficiency switch mode power supplies

PIN DESCRIPTION

     JUYI N Channel Enhancement Mode Power MOSFET 500V 8A with Fast switching


Absolute Maximum Ratings(Tc=25ºC Unless Otherwise Noted)
     JUYI N Channel Enhancement Mode Power MOSFET 500V 8A with Fast switching

Electrical Characteristics(Tc=25ºC Unless Otherwise Noted)
JUYI N Channel Enhancement Mode Power MOSFET 500V 8A with Fast switching

Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
JUYI N Channel Enhancement Mode Power MOSFET 500V 8A with Fast switching

JUYI N Channel Enhancement Mode Power MOSFET 500V 8A with Fast switching

JUYI N Channel Enhancement Mode Power MOSFET 500V 8A with Fast switching

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